Methods of forming C4 round dimple metal stud bumps for fine pitch packaging applications and structures formed thereby

摘要

Methods of forming microelectronic device structures are described. Those methods may include forming a passivation layer on a substrate, wherein the substrate comprises an array of conductive structures, forming a first via in the passivation layer, forming a second via in the passivation layer that exposes at least one of the conductive structures in the array, and wherein the second via is formed within the first via space to form a step via, and forming a conductive material in the step via, wherein a round dimple is formed in the conductive material.