Direct use of Quasi Monocrystalline Porous Silicon (QMPS) layer for thin Silicon Solar Cell by Layer Transfer Process is an attractive possibility. QMPS layer is obtained by annealing of double layer porous silicon, a thin high porous layer below a low porous relatively thick layer of several microns. These layers are reported to have higher absorption coefficient compared to crystalline silicon at the wavelength of interest for solar cells. A model has been developed to account for higher absorption coefficient of QMPS layer. The model compares the experimental results well and it is extended to absorption coefficient of QMPS layer for different thickness, porosity etc. Computed values of absorption coefficient and some data relating to electronic properties of QMPS layers are used to investigate solar cell potential of QMPS layers.
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