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Effect of porosity on hertzian contact damage in silicon-nitride ceramics

机译:孔隙率对氮化硅陶瓷偏振接触损伤的影响

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Hertzian indentation tests were performed to investigate the effect of porosity on the contact damage behavior of Si_3N_4 ceramics. Using a bonded-interface technique, the Hertzian contact damage patterns were examined. As a result of intragranular microfracture under Hertzian contact, a distributed subsurface damage region is developed in highly porous Si_3N_4 ceramics. In contrast, low-porosity Si_3N_4 shows a classical cone crack. Regardless of these two distinct damage modes, all the damaged specimens were observed to fail from the contact center in three-point bending tests. However, low-porosity Si_3N_4 exhibits an abrupt strength loss when the indentation load exceeds a critical value, while highly porous Si_3N_4 shows a gradual strength degradation.
机译:进行赫斯氏压痕试验以研究孔隙率对Si_3N_4陶瓷接触损伤行为的影响。使用粘合界面技术,检查了赫兹触点损伤模式。由于赫兹触点下的术中微折衷,分布式地下损伤区域是在高度多孔的Si_3N_4陶瓷中开发的。相反,低孔隙率Si_3N_4显示了经典锥形裂纹。无论这两个不同的损伤模式如何,都观察到所有损坏的标本在三点弯曲试验中从接触中心失败。然而,当压痕负载超过临界值时,低孔隙度Si_3N_4表现出突然的强度损失,而高度多孔Si_3N_4表示逐渐强度降低。

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