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首页> 外文期刊>Ceramic Engineering and Science Proceedings >Effect of porosity on Hertzian contact damage in silicon-nitride ceramics
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Effect of porosity on Hertzian contact damage in silicon-nitride ceramics

机译:孔隙率对氮化硅陶瓷中赫兹接触损伤的影响

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Hertzian indentation tests were performed to investigate the effect of porosity on the contact damage behavior of Si{sub}3N{sub}4 ceramics. Using a bonded-interface technique, the Hertizan contact damage patterns were examined. As a result of intragranular microfracture under Hertzian contact, a distributed subsurface damage region is developed in highly porous Si{sub}3N{sub}4 ceramics. In contrast, low-porosity Si{sub}3N{sub}4 shows a classical cone crack. Regardless of these two distinct damage modes, all the damaged specimens were observed to fail from the contact center in three-point bending tests. However, low-porosity Si{sub}3N{sub}4 exhibits an abrupt strength loss when the indentation load exceeds a critical value, while highly porous Si{sub}3N{sub}4 shows a gradual strength degradation.
机译:进行了赫兹压痕试验,以研究孔隙率对Si {sub} 3N {sub} 4陶瓷接触破坏行为的影响。使用键合界面技术,检查了Hertizan接触损伤的模式。由于在赫兹接触下发生晶粒内微裂纹,在高度多孔的Si {sub} 3N {sub} 4陶瓷中形成了一个分布的表面下破坏区域。相反,低孔隙率的Si {sub} 3N {sub} 4显示出经典的锥裂。不管这两种不同的损坏模式如何,在三点弯曲测试中都观察到所有损坏的样本都从接触中心失效。但是,当压入载荷超过临界值时,低孔隙率的Si {sub} 3N {sub} 4会出现突然的强度损失,而高孔隙度的Si {sub} 3N {sub} 4则显示出逐渐的强度下降。

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