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Using optical measurements to improve electronic models of bismuth nanowires

机译:使用光学测量来改善铋纳米线的电子模型

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The optical properties of nanowires are studied because the singularities in their electronic density of states enhance the Seebeck coefficient without much decrease in the electrical conductivity, thus relaxing the trade-off between a high electrical conductivity and a high Seebeck coefficient, which is usually found in bulk materials. Filling a porous anodic alumina template with bismuth forms aligned, self-assembled arrays of bismuth nanowires. The previously measured strong optical absorption feature is compared to the simulated absorption spectrum resulting from an indirect electronic transition. The simulated and measured absorption spectra are similar in spectral shape and in their dependence on wire diameter and polarization. However, the simulated absorption peak occurs at 420 cm{sup}(-1) higher than the measured absorption peak. This difference could result from inaccurate values of the L and T point masses or of the band overlap in bulk bismuth at room temperature. Since the large optical absorption at ~1000 cm{sup}(-1) which is observed in bismuth nanowires is not observed in bulk bismuth, the optical properties of bismuth nanowires are also shown to provide an important tool for determining the band properties of bulk bismuth, which sensitively affect the thermoelectric properties of bulk bismuth and bismuth nanowires.
机译:研究了纳米线的光学性质,因为它们的电子密度的奇异性增强了塞贝克系数,而导电率下降得多,从而在高电导率和高塞贝克系数之间放松折衷,通常在散装材料。用铋填充多孔阳极氧化铝模板,形成对齐的自组装纳米线阵列。将先前测量的强光学吸收特征与由间接电子转换产生的模拟吸收光谱进行比较。模拟和测量的吸收光谱的光谱形状类似,并依赖于线直径和极化。然而,模拟吸收峰发生在比测量的吸收峰高的420cm {sup}( - 1)下发生。这种差异可能是由L和T点质量的不准确值或在室温下散装铋重叠的值。由于在体铋中观察到在铋纳米线中观察到的〜1000cm {sup}(-1)的大型光学吸收,因此还显示了铋纳米线的光学性质,以提供一种用于确定散装带性能的重要工具铋,敏感地影响散装铋和铋纳米线的热电性能。

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