Measurement models of nanowire semiconductor structures based on re-useable sub-structures

摘要

Methods and systems for generating measurement models of nanowire based semiconductor structures based on re-useable, parametric models are presented herein. Metrology systems employing these models are configured to measure structural and material characteristics (e.g., material composition, dimensional characteristics of structures and films, etc.) associated with nanowire semiconductor fabrication processes. The re-useable, parametric models of nanowire based semiconductor structures enable measurement model generation that is substantially simpler, less error prone, and more accurate. As a result, time to useful measurement results is significantly reduced, particularly when modelling complex, nanowire based structures. The re-useable, parametric models of nanowire based semiconductor structures are useful for generating measurement models for both optical metrology and x-ray metrology, including soft x-ray metrology and hard x-ray metrology.