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Formation of Thin Layers of Cu_2O on Freshly Etched Copper in Aerated, Moderately Acid Chloride Solutions

机译:在充气,中等酰氯溶液中形成新蚀刻铜的Cu_2O薄层

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When rotating disc electrodes of freshly etched copper (pure or electroplated with or without embedded TiO_2 particles) were immersed in aerated chloride solutions at pH 4.0 or lower a characteristic behaviour was seen. For a relatively short time pH and the corrosion potential decreased. Then the potential increased over a long time, up to some 15 h. pH also started to increase, but a pH-stat maintained a constant value during the rest of the experiment. Examination by Auger spectroscopy of an electrode taken out after the short time exposure showed a thin layer (< 18 A) of Cu_2O, contaminated by chloride. On an electrode exposed for a long time the layer had grown to ca. 18 A, and no chloride was detected. These observations seem to agree with a description by Sato, according to which the potential of a corroding metal should decrease when in contact with an n-type conducting oxide, but increase when in contact with a p-type conducting oxide. Strehblow et al. claim that pure Cu_2O is a p-type conductor, while contamination by chloride makes it an n-type conductor. However, an alternative interpretation appears to be more correct for the present case. Another interesting point was an s-shaped course of the potential increase at long times together with a negligibly small change in corrosion rate. Suitable derivations show that an Avrami type process took place, apparently the formation of the pure oxide layer. However, analysis and interpretation of the anodic reaction indicate that about half of the corrosion current was spent on oxide formation, but the thickness of the oxide layer at long times represented only about one percent of the thus calculated charge. Thus formation and dissolution of oxide took place at nearly equal rates.
机译:当将新蚀刻的铜的旋转盘电极(用嵌入或没有嵌入的TiO_2颗粒颗粒)浸入pH4.0时或降低特征行为的气泡氯化物溶液中。对于相对短的时间pH,腐蚀电位减少。然后电位增加了很长时间,高达约15小时。 pH也开始增加,但在实验的其余部分期间,pH-stat保持恒定值。在短时间暴露后取出的电极螺旋谱检查显示薄层(<18a)的Cu_2O,被氯化物污染。在电极上暴露长时间的电极,层已经生长为CA. 18A,没有检测到氯化物。这些观察结果似乎与由佐藤的描述一致,根据该方法,腐蚀金属的电势应与n型导电氧化物接触时减少,但增加与p型导电氧化物接触时。 strehblow等。要求纯Cu_2O是p型导体,而氯化物的污染使其成为n型导体。然而,替代解释对于目前的案例似乎更正确。另一个有趣的点是潜在的潜在增加的过程,腐蚀速率忽略的少量变化。合适的衍生表明,发生了Avrami类型的过程,显然是纯氧化物层的形成。然而,阳极反应的分析和解释表明约一半的腐蚀电流在氧化物形成上占据了氧化物层,但氧化物层长时间的厚度仅表示如此计算的电荷的约1%。因此,在几乎相等的速率下形成和溶解氧化物。

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