Surface treatment of SiC using NF_3/O_2 plasma

摘要

Surface treatment of poly-β-SiC by reactive ion etching (RIE) was investigated in NF_3/O_2 plasma. The addition of 10% oxygen in NF_3 plasma increased the etching rate to ca. 1 μm min~(-1). and gave much smoother surface than that etched in pure NF_3 plasma. However, further addition of O_2 decreased the etching rate. Optical emission spectra indicated the presence of O~· radicals in NF_3/O_2 plasma, and X-ray photoelectron microscopy (XPS) analysis of the etched samples revealed that an SiO_2 layer was formed on the surface at high O_2 contents. The role of oxygen in NF_3/O_2 plasma was elucidated.