Lateral Schottky Rectifiers for Power Integrated Circuits

摘要

The novel characteristics of a new Schottky rectifier structure, called Lateral Merged Double Schottky (LMDS) rectifier on SOI and 4H-SiC are presented. The anode of the proposed lateral device utilizes the trenches filled with a high barrier Schottky contact during reverse bias. We demonstrate that the proposed LMDS rectifier has a low forward voltage drop, small reverse leakage current and high breakdown voltage compared to the conventional Schottky structures. For the first time, a Schottky rectifier is shown to have a sharp reverse breakdown similar to that of a PiN diode, in spite of the fact that only Schottky junctions are used in the proposed structure. The reasons for the improved performance of the LMDS rectifier are analyzed.