MOVPE Synthesis of InGaP Quantum Dots on GaP and their Characterisation

摘要

We report the growth of InGaP quantum dots on nominally oriented (100) GaP substrates by metalorganic vapour phase epitaxy in Stranski-Krastanow mode. Various growth parameters such as a) growth temperature, b) thickness of InGaP layer, c) Indium content in the InGaP layer, d) growth rate and e) post growth ripening time have been varied to achieve dot density greater than 10~(10)/cm~2 with dot dimensions ～50 nm diameter and ～5 nm height. Surface photovoltage spectroscopy is shown to be a convenient and sensitive technique to monitor the various stages of the growth of quantum dots.