Influence of Localisation Effects on Performance of Semiconductor-based Light Emitting Devices

摘要

Influence of localisation effects on the performance of GaN-based light emitting diodes is discussed. In-plane and in-depth homogeneity of these structures is studied by means of electron microscopy, scanning cathodoluminescence and micro-photoluminescence. Large in-plane inhomogeneity of light emission from GaN films is related to a granular microstructure of the samples studied, to changes in diffusion length, and also to a nonuniform defect distribution.