Pulsed I-V Studies on 0.5 μm GaAs MESFETs

摘要

It is well established in the literature that the Pulsed I-V characteristics give a better representation of non-linear drain current in MESFETs than the conventional DC I-V curves. This paper presents a detailed study of the Pulsed I-V characteristics of a typical 0.5 μm gate GaAs MESFET fabricated in-house. An attempt has been made to separate out the device self-heating effects from the traps-related phenomena. Our study concludes that the self-heating effect is less important and the traps-related effects is the dominant factor for the observed dispersion in the devices studied in this work.