Pseudo-random pulsed IV characterisation system for GAAS MESFET/HEMT devices

摘要

A novel experimental system for observing the dependence of the trapping states on electric field for GaAs MESFET/HEMT devices is presented. The new procedure employs a pseudo-random pulse characterisation system for observing the memory effect in these devices. The results indicate that the trapping effect is more serious than may be thought.