Performance Optimization and Analysis of ZnO Based Green Light Emitting Diode

摘要

ZnO based materials system have attracted lots of attention because of their broad range applications in optoelectronics devices such as Light emitting diode, photo-detectors, solarcell etc. A design approach for hetero-structure LED based on Zinc Oxide (ZnO) has been proposed emitting green electroluminescence in the range of 530-540 nm. Rigorous theoretical investigation has been performed for the device optimization to improve I-V characteristics, intensity and internal quantum efficiency. The optimization involves doping concentration, alloy composition and thickness calibrations of various constituent layers. Various aspects of band gap engineering and confinement has been taken into consideration for developing high quality zinc oxide films for device applications. These results hold the prospect for the development of green LEDs with superior performance.