This paper investigated crystal growth process of 200 mm heavily antimony doped silicon crystals. 22" hot zone with 90-100kg charge sizes was used. Heat shield configuration was optimized. New doping tool was designed for vapor phase method to add antimony into the melt. The effects of doping temperature and pressure on doping time were studied. Special attentions were paid to growth parameters, especially the effect of pressure on crystal resistivity profile. Crystal with resistivity less than 0.02 Ωcm was produced.
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