PRODUCTION METHOD FOR Ga-DOPED SILICON SINGLE CRYSTAL, THE Ga-DOPED SILICON SINGLE CRYSTAL, AND SILICON SINGLE CRYSTAL SOLAR CELL MADE OF THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a production method for a Ga-doped silicon single crystal capable of suppressing the occurrence of OSF(oxidation-induced stacking fault) due to a heavy metal in the subject crystal useful as the material for a solar cell, and also provide the Ga-doped silicon single crystal for the solar cell having no optical degradation and a high photoelectric conversion efficiency and a silicon single crystal solar cell made of the same.;SOLUTION: This method comprises doping gallium in a silicon single crystal, adding the smaller amount of aluminum than that of gallium and growing the single crystal by a CZ method to produce the Ga-doped silicon single crystal. The obtained silicon single crystal is added with gallium as a dopant, the concentration of gallium contained in the crystal is 5×1017-3×1015 atoms/cm3, and aluminum is added in the lower concentration than that of gallium.;COPYRIGHT: (C)2002,JPO