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Measurement of anomalous resistance-temperature relation for neutron transmutation doped germanium

机译:中子嬗变掺杂锗的异常电阻温度的测量

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We present precise measurements of the resistance-temperature variation of several samples of neutron transmutation doped (NTD) germanium, at temperatures from 70 mK to 1 K. This material is used widely both for thermometry and for the thermistor element in bolometers and microcalorimeters. The resistance, R, is expected to follow the variable range hopping equation R(T) = R_0T~q exp(T_0/T)~p, where T is temperature and R_0 and T_0 are material parameters. A value of ?= 0.5 is supported by theory, and usually appears to allow good fits to data (with the T~q term neglected). However, we find that setting p = 0.5 produces clear systematic errors for some of our samples. Taking p as a fitting parameter gives excellent fits over a large temperature range with p approx= 0.55 for these samples. We consider possible causes for this behaviour, and suggest that in general NTD germanium calibration data should be examined carefully for errors caused by assuming an incorrect value of p.
机译:我们在70 mk至1k的温度下呈现了几种中子嬗变掺杂(NTD)锗样品的电阻温度变化的精确测量。该材料广泛用于测温仪和微量微量仪中的热敏电阻元件。预期电阻r,预计将遵循可变范围跳跃等式R(t)= r_0t〜q exp(t_0 / t)〜p,其中t是温度,r_0和t_0是材料参数。理论上支持的值?= 0.5,并且通常似乎允许良好的符合数据(具有T〜Q术语忽略)。但是,我们发现设置p = 0.5为我们的一些样品产生明确的系统错误。服用P作为配合参数,在大型温度范围内具有优异的拟合,对于这些样品,P约= 0.55。我们认为可能的这种行为的可能原因,并建议在一般的NTD锗校准数据中仔细检查由假设P的错误值引起的错误。

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