首页> 外文会议>Annual Pan Pacific microelectronics symposium >USE OF AUGER DEPTH PROFILING AND SURFACE ANALYSIS TO IDENTIFY FAILURE MECHANISMS IN THIN FILMS USED IN TAB AND OTHER DEVICE PACKAGING
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USE OF AUGER DEPTH PROFILING AND SURFACE ANALYSIS TO IDENTIFY FAILURE MECHANISMS IN THIN FILMS USED IN TAB AND OTHER DEVICE PACKAGING

机译:使用螺旋钻深度分析和表面分析,以识别标签和其他设备包装中使用的薄膜中的失效机制

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There has been an assumption that thin and thick film metallizations remain functionally and metallurgically stable after extended storage at room temperature. Some examples of these are Chrome/Gold, Molybdenum/ Gold, Titanium-Tungsten/Gold, Titanium Nitride/ Gold [8-10] and Chrome/Copper/ Chrome [14] for thin film devices, and electroless-plated Nickel+Gold [16] for other device types. Since these metallizations conform to the normal time ana Arrhenius temperature dependencies involved in diffusion phenomena, it will be shown that such systems can yield device failures due to interdiffusion after only a jew years exposure to room temperature. With elevated temperature exposure, the failure rates will be accelerated. For example, the Titanium-Tungsten/Gold metallization on aluminum, frequently employed in Tape Automated Bonding (TAB) packages can yield bonding and adhesion failures in only three years at room temperature due to grain boundary interdiffusion. Such interdiffusion has been found to exhibit energy-of-activation values as low as 0.6 e.V. Temperature excursions above room temperature were found to accelerate the diffusion, wherein the "barrier metal" can diffuse to the surface of the gold resulting in low strength bonds or poor wetabilily/solderability, or adhesion failures of the plated gold "bumps". Chrome/Gold can behave similarly. In this paper, it will be shown that these metallizations can be rendered more robust by the introduction of impurities such as oxygen and nitrogen, which are thought to reside preferentially in the grain boundaries of these films, thus blocking the diffusion pathways. In the case of electroless nickel on aluminum, reduction in the phosphorus content in the nickel can result in diffusion of the aluminum to the nickel surface, where the aluminum can oxidize to yield poor solderability of the nickel. Similarly, Kovar, or Beam lead" parts which have been tin or gold plated can exhibit poor solderability when such interdiffusion occurs. The use of surface mounted parts (SMT) having such metallization combinations can also yield adhesion failures or poor solderability due to such interdiffusion. The limitations of typical investigative protocol, i.e. SEM/EDAX, employed by many companies in "failure analysis," will be presented, followed by a review of the more sensitive analytical techniques currently available.
机译:假设在室温下延长储存后,薄和厚的薄膜金属化在功能上保持和冶金稳定。其中一些实例是铬/金,钼/金,钛 - 钨/金,氮化钛/金[8-10]和铬/铜/铬[14]用于薄膜装置,无电镀镍+金[ 16]对于其他设备类型。由于这些金属化符合正常时间Ana Arhenius温度依赖性,因此涉及扩散现象的温度依赖性,因此在仅在犹太人暴露于室温之后,这种系统可以产生由于相互间隔而产生的设备故障。随着温度升高的升高,将加速失效率。例如,铝上的钛 - 钨/金金属化,经常在磁带自动粘合(突片)包装中,在室温下仅在晶界相互扩散时在室温下仅产生粘合和粘合失效。已经发现这种相互积分表现出最低为0.6e.V的激活能量值。发现温度偏移以加速扩散,其中“阻挡金属”可以扩散到金的表面上,导致低强度键或湿润/可焊性的差,或镀金“凸块”的粘附失效。 Chrome / Gold可以表现得很好。在本文中,将表明,通过引入诸如氧气和氮的杂质,这些金属化可以更加稳健,这被认为优先于这些薄膜的晶界中的晶界居中,从而阻止扩散途径。在铝上的化学镀镍的情况下,镍中磷含量的降低可导致铝的扩散到镍表面,其中铝可以氧化以产生镍的可焊剂不良。类似地,当发生这种相互作用时,具有锡或镀金的型号或镀铬的孔径可以表现出可耐可燃性差。具有这种金属化组合的表面安装部件(SMT)也可以产生粘附故障或由于这种相互作用而导致的可焊剂不良。典型调查协议的局限性,即许多公司在“失败分析”中的许多公司采用的SEM / EDAX,然后审查目前可用的更敏感的分析技术。

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