Enhancement of the pad profile and lifetime using pad conditioning simulation with disk sweep rate

摘要

In the present work, in order to enhance the profile and lifetime of the CMP pad, the role of disk sweep condition in the pad profile was investigated employing pad conditioning simulation with parameters proposed on the basis of the Preston polishing model. From the comparison between the measured pad wear test results and those simulated as a function of sweep rate, we can optimize the pad profile. Furthermore, the application of these results to shallow trench isolation process for 0.18 μm DRAM memory directly confirms a significant extention of pad life.