Silicon wafers were bonded hydrophobically or in UHV. Initial bonding was performed at room temperature. The electrical properties were characterized by temperature dependent current-voltage and complex impedance measurements. The current flow across the interface is thermally activated. The complex impedance measurements show filling and emptying of interface states. The density of states and the capture cross section were calculated from frequency dependent conductance and capacitance measurements. The results are compared with measurements of hydrophobically bonded interfaces. Spreading resistance measurements show a change of doping level at the interface after annealing to 450°C and 1000°C consistent with a boron contamination associated with the bonding procedure. Finally, electrical measurements are presented showing that currents up to 4000 A can flow across a bonded interface with an area of 56 cm~2.
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