This paper focuses on low temperature bonding technology and its applications in photonics devices in use in various fields. Fabrication of a wafer bonded two-layer germanium (Ge) structure for far-infrared detector application was demonstrated by surface activated bonding (SAB) method at room temperature. Very low-resistive Ge/Ge junctions were obtained by SAB method. The feasibility of low-temperature 3-D integration of optical semiconductor chips was also demonstrated by Au-Au SAB in ambient air. Using this technique, compact and thin micro encoders and laser Doppler velocimeters (2.8 mm × 2.8 mm × 1 mm thick) were developed.
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