Suppression of hexagonal GaN in cubic GaN growth by In surfactant effect combined with the precise control of V/III ratio

摘要

An interesting correlation between insertion ratio of hexagonal (h-)GaN phase and surface flatness in the cubic (c-)GaN rf-MBE growth on GaAs substrate has been discussed. Combined with the precise control of V/Ill ratio, In beam irradiation is a very effective method to improve the surface flatness and to suppress the h-GaN insertion on the {111}B planes during growth. This may be due to the In surfactant effect, and we have successfully controlled the insertion ratio through the improvement of the surface flatness. The experimental results strongly indicate that it is possible to grow high quality c-GaN layers by In beam irradiation combined with precise control of V/III ratio.