A new approach to the growth of cubic GaN films using an AlN/GaN ordered alloy as a buffer layer

摘要

Cubic GaN films on GaAs (100) were successfully grown using a newly introduced AlN/GaN ordered alloy (OA) and plasma-assisted molecular beam epitaxy. The epilayer quality was obtained by using a (AlN){sub}1(GaN){sub}9 OA buffer layer (the numbers represent the number of monolayers). Dominant cubic GaN growth was confirmed by in-situ RHEED observation, photoluminescence (14K) and X-ray diffraction measurements.