infrared; receiving sensor; InGaAs; asymmetric step quantum well;
机译:利用In_(0.05)Ga_(0.95)As / Al_(0.32)Ga_(0.68)As / Al_(0.45)Ga_(0.55)作为不对称阶跃量子阱的子带间跃迁的Stark位移的可调谐中红外光电探测器
机译:调制掺杂的Ga_(1-y)Al_(y)As / Ga_(1-x)Mn_(x)As / Ga_(1-y)Al_(y)中Mn间隙的费米能量依赖性形成的直接证据作为异质结构
机译:平均Al摩尔分数> 20%的Al_(x)Ga_(1-x)N和Al_(x)Ga_(1-x)N / Al_(y)Ga_(1-y)N超晶格的P型电导率
机译:52.6:可调谐中红外接收传感器由IN_(X)GA_(1-x)AS / AL_(y)GA_(1-Y)AS / AL_(Z)GA_(1-Z)作为不对称步长量子阱结构
机译:InP / In_ {0.53} Ga_ {0.47} As界面对In_ {0.52} Al_ {0.48} As / In_ {0.53} Ga_ {0.47} As异质结构中自旋轨道相互作用的影响