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Over-estimate of Thin Dielectric Lifetime in Single Doping Type Poly-Gate Capacitors

机译：单掺杂型多栅电容器中薄电介质寿命的过度估计

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《Annual Device Research Conference》|2001年||共82页
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Wang S.J.; Chen I.C.; Institute of Electric and Electronic Engineer;
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中图分类自动化技术、计算机技术;
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专利

1. Overestimate of thin dielectric lifetime in single doping type poly-gate capacitors [J] . Wang S.J., Chen I.C. IEEE Transactions on Electron Devices . 1991,第12期

机译：高估了单掺杂型多栅电容器的薄介电寿命
2. Lifetime of thin oxide and oxide-nitride-oxide dielectrics within trench capacitors for DRAMs [J] . Hiergeist P., Spitzer A. IEEE Transactions on Electron Devices . 1989,第5期

机译：DRAM沟槽电容器中的薄氧化物和氮氧化物氧化物电介质的寿命
3. High p-type doping, mobility, and photocarrier lifetime in arsenic-doped CdTe single crystals [J] . Nagaoka Akira, Kuciauskas Darius, McCoy Jedidiah, Applied Physics Letters . 2018,第19期

机译：砷掺杂CdTe单晶中的高p型掺杂，迁移率和光载流子寿命
4. Over-estimate of Thin Dielectric Lifetime in Single Doping Type Poly-Gate Capacitors [C] . Wang, S.J., Chen, . 2001

机译：单掺杂型多栅极电容器薄介电寿命的高估
5. Synthesis of Polymer-like Hydrogenated Carbon for Thin Film Capacitors and the Effect of Dual Dissimilar Dielectrics on Electrical Properties of Capacitors for High Energy Density Applications [D] . Akbari, Sepehrdad . 2019

机译：用于薄膜电容器的聚合物样氢化碳的合成及双不同电介质对高能密度应用电容器电性能的影响
6. Characterization of epitaxial GaAs MOS capacitors using atomic layer-deposited TiO2/Al2O3 gate stack: study of Ge auto-doping and p-type Zn doping [O] . Goutam Kumar Dalapati, Terence Kin Shun Wong, Yang Li, 2012

机译：利用原子层沉积的TiO2 / Al2O3栅叠层表征外延GaAs MOS电容器：Ge自掺杂和p型Zn掺杂的研究
7. Enhanced electrical properties of Nb-doped a-HfO2 dielectric films for MIM capacitors [O] . Chris Yeajoon Bon, Dami Kim, Kanghyuk Lee, 2020

机译：用于MIM电容器的NB掺杂A-HFO2介电膜的电性能提高
8. TNF doped mylar: A rad-hard film dielectric developed for pulse-discharge capacitors. [R] . Bischoff, G. C., Edwards, L. R. 1991

机译：TNF掺杂聚酯薄膜：为脉冲放电电容器开发的抗辐射薄膜电介质。

Over-estimate of Thin Dielectric Lifetime in Single Doping Type Poly-Gate Capacitors

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