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The impact of single-wafer processing on fab cycle time

机译:单晶片处理对FAB循环时间的影响

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Rapid thermal processing is already the convention for processes such as silicide annealing, and is being studied as an alternative for virtually every other thermal process in modern CMOS process flows. Single-wafer cleaning is also a broad area of research and development, both in industry and academia, although single-wafer cleaning is not as mature a technology as rapid thermal processing. This paper's objective is to show how single-wafer processing can improve a fab's throughput time. Throughput time (also called cycle time) is the length of time that passes from when a wafer enters a fab to begin processing until all wafer processing is completed and the wafer is ready for final probe. This paper only considers front-end processing.
机译:快速热处理已经是用于硅化物退火的方法的公约,并且正在研究现代CMOS工艺流动中几乎所有其他热过程的替代方案。单晶圆清洁也是在工业和学术界的广泛的研发领域,尽管单晶片清洁并不像快速热处理那样成熟。本文的目的是展示单晶片处理如何提高FAB的吞吐量。吞吐量时间(也称为循环时间)是从晶片进入Fab开始处理的时间的时间长度,直到所有晶片处理完成并且晶片准备好用于最终探针。本文仅考虑前端处理。

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