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Gauge Control for sub 170 nm DRAM Product Features

机译:用于SUB 170 NM DRAM产品功能的规格控制

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摘要

As modern circuit architecture features steadily decrease in size, more accurate tools are needed to meaningfully measure critical dimensions (CD). As a general rule, a metrology tool should be able to measure 1/10 of the product tolerance. As CD's continue to shrink, gauge control becomes more relevant. The trend is illustrated in Table 1. The standard in-line critical dimension measurement tool is the top-down scanning electron microscope (SEM). An emergine technology for high speed, high accuracy CD measurement is scatterometry. This paper will compare the two technologies for in-line CD measurement for three applications: A product etch step (assessing gauge capability as well as trending), a product resist step (trending), and lithographic cell monitors (trending).
机译:由于现代电路架构的尺寸稳定地减小,因此需要更准确地测量关键尺寸(CD)。作为一般规则,计量工具应该能够测量产品公差的1/10。随着CD的继续缩小,仪表控制变得更加相关。表1中的趋势如表1所示。标准在线关键尺寸测量工具是自上而下的扫描电子显微镜(SEM)。一种高速,高精度CD测量的射击技术是散射测定法。本文将对三种应用进行串联CD测量的两种技术:产品蚀刻步骤(评估规格能力以及趋势),产品抵抗步骤(趋势)和光刻细胞显示器(趋势)。

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