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Inspectability Study of Advanced Photomaska With OPC Structures

机译:高级PhotomaskA与OPC结构的检查性研究

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In the effort to extend the life of a technology node, reticle enhancement techniques are utilized extensively. The inspectability of advanced photomasks becomes increasingly difficult as OPC (Optical Proximity Correction) structures are incorporated in the mask design. OPC structures, such as serifs and sub-resolution assist features, are sub-specification (below the defined specification) geometries for the inspection tool. This makes it difficult to maintain high sensitivity on contamination inspection, while not detecting these OPC structures as false defects. Mask inspection can be broken down into two categories: pattern integrity and contamination, the latter of which is the topic of this paper.
机译:在延长技术节点的寿命的努力中,广泛利用掩模版增强技术。随着OPC(光学邻近校正)结构结合在掩模设计中,高级光掩模的检查性变得越来越困难。 OPC结构,例如Serifs和子分辨率辅助特征,是用于检查工具的子规范(低于定义的规范)几何形状。这使得难以对污染检查保持高灵敏度,同时不会检测这些OPC结构作为假缺陷。面膜检查可以分为两类:模式完整性和污染,后者是本文的主题。

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