首页> 外文会议>Annual IEEE International ASIC/SOC Conference >Impact of on-chip interconnect frequency-dependent R(f)L(f) on digital and RF design
【24h】

Impact of on-chip interconnect frequency-dependent R(f)L(f) on digital and RF design

机译:片上互连频率依赖性R(F)L(F)对数字和RF设计的影响

获取原文

摘要

On-chip interconnect exhibits clear frequency-dependence in both resistance and inductance. A compact ladder circuit model is developed to capture this behavior, and we examine its impact on digital and RF circuit design. It is demonstrated that the use of DC values for R and L is sufficient for delay analysis, but RL frequency dependence is critical for the analysis of signal integrity, shield line insertion, power supply stability, and RE inductor performance.
机译:片上互连在抵抗和电感方面表现出明显的频率依赖性。开发了一种紧凑的梯形电路模型以捕获这种行为,并检查其对数字和RF电路设计的影响。结果表明,使用R和L的DC值足以进行延迟分析,但RL频率依赖对于分析信号完整性,屏蔽线插入,电源稳定性和RE电感器性能至关重要。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号