Fabrication technology and device performance of Sub-50-nm-gate InP-based HEMTs

摘要

Sub-50-nm-gate InAlAs/InGaAs high electron mobility transistors (HEMTs) lattice-matched to InP substrates were fabricated. Our method of fabrication includes the two-step-recess gate technology and a low temperature process, applied at below 300°C. We succeeded in fabricating ultra-short 25-nm-long T-shaped-gates. RF measurements showed that the cutoff frequency f{sub}T of a 25-nm-gate HEMT is 396 GHz, and this is the highest value yet reported for any type of transistor.