Growth of porous columnar α-GaN layers on c-plane Al_2O_3 by MOCVD using Bisazido dimethylaminopropyl gallium as single source precursor

摘要

We report the growth of highly crystalline and oriented a-GaN layers showing a porous-like microstructure. Employing specific CVD conditions, GaN layers with such morphological features were obtained and characterized in detail by XRD methods. The layer composition was analysed by XPS, AES as well as RBS, and the morphology was investigated by SEM and AFM measurements.