Epitaxial growth of an MgO buffer layer and electrode layer on Si for Pb(Zr,Ti)O/sub 3/ by PLD

摘要

Thin films of MgO were grown on Si[100] substrates as a buffer layer for the epitaxial growth of films of Pb(Zr,Ti)O/sub 3/. A layer of Ir or Pt was also grown on MgO/Si as a bottom electrode layer by pulsed laser deposition. In situ reflection high-energy electron diffraction and an X-ray pole figure confirmed the epitaxial relationship between the film of MgO and the Si[100] substrate, as well as between the layer of Ir or Pt and MgO. The surface and cross-sectional morphologies of films were evaluated by atomic force microscopy and scanning electron microscopy, respectively. The Ir and Pt electrode layers grown on MgO/Si had smooth surfaces good crystallinity. PZT films were also successfully grown epitaxially on the Ir/MgO/Si and Pt/MgO/Si by metal-organic chemical vapor deposition.