Strain-compensated GaInNAs/GaAsP/GaAs/GaInP quantum well lasers grown by gas-source molecular beam epitaxy

摘要

We report the growth of strain-compensated GaInNAs/GaAsP quantum well structures and lasers by gas-source molecular beam epitaxy with a RF-coupled plasma source for nitrogen activation. The influence of growth temperature and rapid thermal annealing (RTA) on the optical properties of GaInNAs/GaAsP quantum well structures were studied. RTA was found to significantly increase the photoluminescence from the quantum wells and reduce the threshold current density of the lasers, mainly due to a removal of N induced non-radiative centers from GaInNAs wells.