CHARGE INJECTION CHARACTERIZATION OF THIN-FILM SOI MOS TRANSISTORS AT HIGH TEMPERATURE

摘要

Theoretical and experimental results from the characterization of the charge injection phenomenon show that the evolution with temperature of the charge-injection-induced error voltage over a switched capacitor, as a function of the fall rate of the switching-off signal, for thin-film, fully depleted SOI MOS transistors, presents similar behaviors for temperatures between 27°C and 300°C. Results from computations based on a strong inversion model and semiconductor level 2-D simulations were confirmed by measurements. A fully on-chip system to characterize charge injection at high temperature was designed. The output buffer used to isolate the transistor to characterize from the external instruments was designed based on the g_m/I_D methodology. All buffer's transistors but one were biased at their zero-temperature-coefficient (ZTC) point.