Silicon Single Electron Transistors (SETs) are successfully fabricated in the form of point contact MOSFETs using VLSI-compatible process on an SOI substrate. Some devices show large Coulomb blockade oscillations at room temperature and the electron addition energy is over 250 meV, ten times larger than the thermal energy at room temperature. In order to integrate SETs, a new type of SET is developed which has a memory effect to control the peak positions, and a directional current switch is demonstrated by integrated two SETs.
展开▼
