EVALUATION AND COMPARISON OF VARIOUS SILICON-ON-SAPPHIRE (SOS) MATERIALS USING THE PSEUDO-MOSFET TECHNIQUE

机译：使用伪MOSFET技术的各种硅 - 蓝宝石（SOS）材料的评估与比较

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The pseudo-MOS transistor (Ψ-MOSFET) allows the characterization of SOS wafers. We show that the threshold voltage, electron mobility and trap density at the silicon-sapphire interface vary remarkably according to the processing sequence of the material. Several possibilities for improving the quality of SOS wafers are discussed based on systematic experimental data.

机译：伪MOS晶体管（ψ-MOSFET）允许表征SOS晶片。我们表明，硅 - 蓝宝石界面处的阈值电压，电子迁移率和陷阱密度根据材料的处理顺序显着变化。基于系统实验数据讨论了提高SOS晶片质量的几种可能性。

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《International Symposium on Silicon-on-Insulator Technology and Devices》|2001年||共6页
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Akitaka Yasujima; Masahiro Matsui; Gerard Ghibaudo; Sorin Cristoloveanu; Nasser Hefyene;
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EVALUATION AND COMPARISON OF VARIOUS SILICON-ON-SAPPHIRE (SOS) MATERIALS USING THE PSEUDO-MOSFET TECHNIQUE

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