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Foreseeing and Active-Suppression of Anomalous Discharge in Plasma Processing Equipment by In-situ Monitoring of Plasma State Using Viewing Port Probe

机译:通过观察端口探针原位监测等离子体状态的预见和抑制等离子体加工设备的异常放电

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We demonstrate for the first time the foreseeing and active suppression of anomalous discharge in a plasma processing equipment. The foreseeing of anomalous discharge is realized by monitoring plasma state using a newly developed viewing-port probe. We have found that a foreseeing signal indicating a slight change in plasma potential appears prior to the occurrence of the anomalous discharge. The time interval between the foreseeing signal and the occurrence of the abnormal discharge is several tens millisecond, which allows to build-up a electric system to control the plasma state. The active suppression of anomalous discharge is demonstrated using a reactive ion-etching system by controlling the applied voltage of electrostatic chuck of wafer stage.
机译:我们首次证明了等离子体加工设备中的对异常放电的预见和主动抑制。通过使用新开发的观察端口探针监测等离子体状态来实现异常放电的预见。我们发现,在发生异常放电之前出现指示等离子体电位略微变化的预见信号。预见信号与异常放电的发生的时间间隔是几十毫秒的,这允许积聚电气系统以控制等离子体状态。使用反应离子蚀刻系统通过控制晶片阶段的静电卡盘的施加电压,使用反应离子蚀刻系统来证明异常放电的主动抑制。

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