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Foreseeing and active-suppression of anomalous discharge in plasma processing equipment by in-situ monitoring of plasma state using viewing port probe

机译:通过使用观察口探头对等离子体状态进行原位监测,预测和主动抑制等离子体处理设备中的异常放电

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We demonstrate for the first time the foreseeing and active suppression of anomalous discharge in a plasma processing equipment. The foreseeing of anomalous discharge is realized by monitoring plasma state using a newly developed viewing-port probe. We have found that a foreseeing signal indicating a slight change in plasma potential appears prior to the occurrence of the anomalous discharge. The time interval between the foreseeing signal and the occurrence of the abnormal discharge is several tens millisecond, which allows to build-up a electric system to control the plasma state. The active suppression of anomalous discharge is demonstrated using a reactive ion-etching system by controlling the applied voltage of electrostatic chuck of wafer stage.
机译:我们首次展示了对等离子体处理设备中异常放电的预见和主动抑制。通过使用新开发的观察口探针监视等离子体状态,可以实现异常放电的预见。我们已经发现,在异常放电发生之前出现了预示信号,该预示信号表明血浆电势略有变化。预见信号与异常放电发生之间的时间间隔为几十毫秒,这允许建立一个电气系统来控制等离子体状态。通过控制晶片台的静电吸盘的施加电压,使用反应性离子蚀刻系统,可以有效地抑制异常放电。

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