IGBT with dynamic controlled anode-short used in power IC

摘要

A new structure to resolve the contradiction between the on-resistance and turning-off time of IGBT is brought forward, which can currently be used in the low-side device of the half-bridge output section of power IC with high-side and low-side drive and half-bridge output section. The basic idea of dynamic controlled anode-short is used to get shorter turnoff time without increasing on-resistance, changing process steps or additional circuit devices. Some analyses and simulation results are given.