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GROWTH FRONT ROUGHENING OF ROOM TEMPERATURE DEPOSITED OLIGOMER THIN FILMS

机译:室温的生长前粗糙化沉积低聚物薄膜

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Growth front scaling aspects are investigated for PPV-type oligomer thin films vapor-deposited onto silicon substrates at room temperature. For film thickness d~15-300 nm, commonly used in optoelectronic devices, correlation function measurement by atomic force microscopy yields roughness exponents in the range H=0.45+-0.04, and an rms roughness amplitude which evolves with film thickness as a power law σ∝ d~β with β=0.28+-0.05. The non-Gaussian height distribution and the measured scaling exponents (H and β) suggest a roughening mechanism close to that described by the Kardar-Parisi-Zhang scenario.
机译:对Gopv型低聚物薄膜研究了生长前缩放方面在室温下蒸汽沉积在硅基衬底上。对于薄膜厚度D〜15-300nm,通常用于光电器件,通过原子力显微镜的相关函数测量在H = 0.45 + -0.04的范围内产生粗糙度指数,并且具有作为电力法的薄膜厚度演变的RMS粗糙度振幅Σαdβ具有β= 0.28 + -0.05。非高斯高度分布和测量的缩放指数(H和β)表明了靠近Kardar-Parisi-Zhang情景所描述的粗糙化机制。

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