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Effects of growth temperatures on the physical properties of Cu_2ZnSnS_4 thin films deposited through spray pyrolysis for solar cell applications

机译:生长温度对喷雾热解沉积Cu_2ZnSnS_4薄膜物理性能的影响

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摘要

This paper reports the effects of substrate temperature on the structural, optical, and electrical properties of Cu2ZnSnS4 (CZTS) thin films deposited on soda lime glass through spray pyrolysis without sulfurization. Substrate temperatures ranged from 250 to 500 degrees C at a step of 50 degrees C, and a precursor solution was prepared by dissolving copper chloride, zinc acetate, zinc chloride, and thiourea in ethanol and di-ionized water. The films were characterized through X-ray diffraction (XRD), field emission scanning electron microscopy, ultraviolet-visible spectroscopy, and electrical resistance and Hall effect measurements, respectively, obtained by two-point probe and van der Pauw techniques. XRD revealed the formation of polycrystalline CZTS thin films and the appearance of relatively intense and sharp diffraction peaks at (112), (200), (220), and (312) of a kesterite phase with (112) preferential orientation, in which the crystalline degree increased as substrate temperature increased. Surface morphological analysis demonstrated the formation of a smooth, compact, and uniform CZTS surface. When substrate temperature increased from 250 to 500 degrees C, single-crystal grains increased from 6.38 to 28 nm, carrier concentration increased from 3.4 x 10(17) to 2.36 x 10(19) cm(-3), Hall mobility increased from 30.96 to 68.52 cm(2)/V.S, optical band gap decreased from 1.74 to 1.14 eV, and resistivity decreased from 0.59 to 3.87 x 10(-3) Omega cm. Hall effect analysis indicated that the films exhibited p-type conductivity.
机译:本文报道了基板温度对通过喷雾热解法(未硫化)沉积在钠钙玻璃上的Cu2ZnSnS4(CZTS)薄膜的结构,光学和电学性质的影响。基板温度在50℃的步骤中在250到500℃的范围内变化,并且通过将氯化铜,醋酸锌,氯化锌和硫脲溶解在乙醇和二去离子水中来制备前体溶液。分别通过X射线衍射(XRD),场发射扫描电子显微镜,紫外可见光谱以及通过两点探针和Van der Pauw技术获得的电阻和霍尔效应测量来表征薄膜。 X射线衍射揭示了多晶CZTS薄膜的形成以及在优先取向为(112)的钾钛矿相的(112),(200),(220)和(312)处出现了相对强烈和尖锐的衍射峰,其中结晶度随着衬底温度的升高而增加。表面形态分析表明形成了光滑,致密和均匀的CZTS表面。当基板温度从250摄氏度增加到500摄氏度时,单晶晶粒从6.38纳米增加到28纳米,载流子浓度从3.4 x 10(17)增长到2.36 x 10(19)cm(-3),霍尔迁移率从30.96增加到68.52 cm(2)/ VS,光学带隙从1.74降低到1.14 eV,电阻率从0.59降低到3.87 x 10(-3)Omega cm。霍尔效应分析表明该膜表现出p型导电性。

著录项

  • 来源
    《Applied Physics》 |2018年第2期|163.1-163.6|共6页
  • 作者单位

    Damghan Univ, Sch Phys, Damghan, Iran;

    Damghan Univ, Sch Phys, Damghan, Iran;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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