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Anomalous ultra-small-angle X-ray scattering from evolving microstructures during tensile creep

机译:异常超小角X射线散射,从拉伸蠕变期间的演化微观结构

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Ultra-small-angle X-ray scattering provides quantitative and statistically significant information on the size distribution of electron density inhomogeneities with dimensions between ≈100 A and ≈5 μm. All sizes are sampled simultaneously with a single experiment, removing the possibility of observational bias. In a material such as commercial silicon nitride, where the inhomogeneities are due to populations of intergranular secondary phases and voids of similar dimensions, the scattering contains contributions from each individual population. A single USAXS scan cannot separate overlapping populations of scatterers due to the different contrasts of the microstructural components. Anomalous USAXS (A-USAXS) is an element-specific contrast variation method to vary the scattering contribution from one of the populations while holding that of the other populations fixed. To follow the size evolution under tensile creep of both the cavities and the Yb disilicate secondary phases, A-USAXS data was measured near the Yb L{sub}(III) absorption edge. Creep cavity and disilicate size distributions were each determined as a function of deformation.
机译:超小角X射线散射提供有关电子密度不均匀性的尺寸分布的定量和统计显着信息,其尺寸在≈100a和≈5μm之间。所有尺寸都与单一实验同时采样,除去观察偏差的可能性。在诸如商业氮化硅的材料中,其中不均匀性是由于晶间二次阶段的群体和相似尺寸的空隙,散射含有来自每个个体种群的贡献。由于微结构部件的不同对比度,单个USAXS扫描不能分离散射体的重叠群体。异常USAX(A-USAXS)是一个特定于元素的对比变化方法,以改变来自其中一个群体的散射贡献,同时保持其他人群的一个群体。为了沿着腔和Yb峰二次相的拉伸蠕变下沿尺寸的进化,在Yb L {Sub}(III)吸收边缘附近测量A-USAX数据。蠕变腔和大胆尺寸分布各自被确定为变形的函数。

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