Inverse modeling has been applied to optimize the crucible design for SiC bulk crystal growth by sublimation technique. The temperature distribution over the powder charge is the main target of the optimization. As a result of computations, the growth crucible design is found, providing a nearly isothermal temperature distribution in the powder, which is known to be beneficial for long-term growth stability. Meeting of complex requirements on the desirable temperature profile is shown to be possible. The implementation of the inverse modeling for temperature optimization is discussed in detail.
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