ON DETERMINATION OF LATTICE CONSTANT OF STOICHIOMETRIC GaAs

摘要

The value of lattice constant of high pure undoped material contenting minimal amount of intrinsic point defects is needed for univocal treatment of experimental data on influence of impurities and nonstoichiometry on defects generation. The existent data about GaAs lattice constant is rather contradictive. The lattice parameter in the thick GaAs single crystal layers grown by liquid-phase epitaxial technique and by MOCVD was determined with an accuracy of +-1·10~(-6) nm by Bond method. The lattice parameter of stoichiornetric GaAs is shown to be of 0.565365 +-0.000001 nm.