Peculiarities of dislocation generation and propagation in silicon wafers after thermal treatment

摘要

Peculiarities of dislocation generation and propagation in single crystal silicon wafers have been studied (growth method -CZ) after various treatments with the four-point bend method. It has been shown that wafers annealing at 450°C leads to essential strengthening in comparison with as-grown ones.lt has been shown that both oxygen precipitates and precipitate-dislocation clusters which are formed in wafer bulk during multi-stage thermal treatment are effective centers of dislocation heterogeneous origination caused by thermal or mechanical stresses.