We present a new approach for the modeling of the chemical mechanical planarization (CMP) process that integrates mechanical and chemical models over multiple scales. A self-consistent physical model has been proposed to describe contact mechanics and slurry flow coupling that occurs between wafer and pad during CMP. We discuss approaches for multiple-scale linking that are developed to combine flow and mechanics from pad roughness scale to wafer scale. Multiple-scale model includes flow between wafer and pad asperities (roughness), flow in pad grooves, and dispensing flow over rotating polish pad. Flow dynamics on this scale significantly affect slurry reaction, mass transport, and polish rate kinetics. We also present coupled mass transfer model based on transport scale analysis and chemical kinetics. Results are compared with literature data and used to demonstrate different polish regimes.
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