Application of Ta_2O_5 in Microelectronics and Moems

机译：Ta_2O_5在微电子和MOEMS中的应用

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Tantalum pentoxide is a kind of high-index, high reflectivity dielectric material, extensively applied in MOEMS, Microelectronics and other related industries. The properties, productions, market, and price of the material are summarized. The paper also discusses the various main standard fabrication processes of Ta_2O_5 and its incoming applications in many fields such as DRAM, high volume capacitors, waveguides etc..

机译：钽五氧化二肟是一种高折射率，高反射率介电材料，广泛应用于MoEms，微电子和其他相关行业。总结了材料的性质，制作，市场和价格。本文还讨论了TA_2O_5的各种主要标准制造过程及其在许多领域中的传入应用，例如DRAM，大容量电容器，波导等。

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《International symposium on test and measurement》|2001年||共5页
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作者
Li Yonghong; Noell Wilfried; Dong Haifeng; Nico F. de Rooij; Zhang Wendong;
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原文格式 PDF
正文语种
中图分类封装及散热问题;
关键词
Ta_2O_5; MOEMS; MEMS; microelectronics; MOCVD; sputtering;

机译：ta_2o_5;moems;mems;微电子;mocvd;溅射;

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3. Silicon-based Moems And Their Applications [J] . Harald Schenk, Wibool Piyawattanametha Journal of microanolithography, MEMS, and MOEMS . 2008,第2期

机译：硅基备忘录及其应用
4. Application of Ta_2O_5 in Microelectronics and Moems [C] . Li Yonghong, Noell Wilfried, Dong Haifeng, ISTM/2001: 4th International Symposium on Test and Measurement . 2001

机译：Ta_2O_5在微电子学和记忆学中的应用
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8. Formation de WSi2 par Reaction Directe Metal-Silicium. Applications en Micro-Electronique (Formation of WSi2 by Direct Metal-Silicon Reaction. Applications to Microelectronics) [R] . Lajzerowicz, J. 1986

机译：形成de Wsi2 par Reaction Directe metal-silicium。应用en micro-Electronique（通过直接金属硅反应形成Wsi2。应用于微电子）

Application of Ta_2O_5 in Microelectronics and Moems

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