Photocurrent response of Shottky diode on silicon-implanted SiO{sub}2 substrate

摘要

We briefly report the optoelectronic characteristics of Shottky-type Photodiode fabricated on the Silicon-implanted Borosilicate glass (SiO{sub}2:S{sup}+) - a novel nano-crystallite Si semi-conducting material. The dark current, photocurrent and breakdown voltage of the SiO{sub}2:Si{sup}+ photodiode illuminated by Ar{sup}+ laser are measured. The effect of annealing time on the semi-conducting property of such material is characterized.