Junction diode with linear response to nuclear radiation - using silicon substrate with doped epitaxial coatings of silicon

摘要

Mfr. of a semiconductor diode starting from a semiconductor crystal and contg. three distinct regions obtd. by depositing a first semiconducting layer (1) with one type of conductivity, then an intermediate intrinsic layer (2) followed by a third semiconducting layer (3) with opposite conductivity to layer (1). The novelty is that layers (1,3) are each preceded by a doping operation, using at =1 impurity which provisionally confers the opposite type of conductivity so that provided by the layers (1, 3). The substrate is pref. Si, the layers being obtd. by epitaxy in the vapour phase, and the impurities by diffusion or ion implantation. Layer (2) is formed by the substrate. The process is used for mfg. junction detector diodes for appts. analysing and measuring nuclear radiation. Linear response to radiation.