Room-temperature CW operation of InP-based long-wavelength InAs quantum dot lasers

机译：室温CW操作的基于INP的长波长INAS量子点激光器

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Long-wavelength quantum-dot lasers were fabricated on InP (311)B substrates by using high-dense InAs quantum dots (9 /spl times/10/sup 10/ cm/sup -2/) as active media, which achieved 1.6-/spl mu/m continuous-wave lasing at room temperature. The lasers had a low threshold current density of 380 A/cm/sup 2/ and a high external differential quantum efficiency of 32%.

机译：通过使用高密集的INAS量子点（9 / SPL次/ 10 / SUP 10 / CM / SUP -2 /）作为活性介质，在INP（311）B衬底上制造了长波长量子点激光器，其实现1.6- / SPL MU / M连续波在室温下激光。激光器的低阈值电流密度为380A / cm / sup 2 /和高外差量子效率为32％。

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《Pacific Rim Conference on Lasers and Electro-Optics》|2001年||共2页
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Saito H.; Nishi K.; Sugou S.;
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中图分类 TN2-53;
关键词
indium compounds; InP-based; MOCVD; vapour phase epitaxial growth; semiconductor growth; molecular beam epitaxial growth; optical fabrication; current density; laser transitions; semiconductor quantum dots; quantum well lasers; III-V semiconductors;

机译：铟化合物;基于INP;MOCVD;气相外延生长;半导体生长;分子束外延生长;光学制造;电流密度;激光转换;半导体阱;III-V半导体;III-V半导体;III-V半导体;

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专利

1. Efficient high-temperature CW lasing operation of oxide-confined long-wavelength InAs quantum dot lasers [J] . Xiaodong Huang, Stintz A. Electronics Letters . 2000,第1期

机译：氧化物限制的长波长InAs量子点激光器的高效高温连续波激光操作
2. High-power continuous-wave operation of InP-based InAs quantum-dot laser with dot-in-a-well structure and strain-modulating layer [J] . Byounggu Jo, Cheul-Ro Lee, Jin Soo Kim, Laser physics letters . 2014,第11期

机译：具有阱中孔结构和应变调制层的InP基InAs量子点激光器的大功率连续波操作
3. Epitaxial growth of 1.55μm emitting InAs quantum dashes on InP-based heterostructures by GS-MBE for long-wavelength laser applications [J] . R. Schwertberger, D. Gold, J.P. Reithmaier, Journal of Crystal Growth . 2003,第1a4期

机译：GS-MBE在基于InP的异质结构上外延生长1.55μm的InAs量子虚线，用于长波长激光应用
4. Room-temperature CW operation of InP-based long-wavelength InAs quantum dot lasers [C] . Saito, H., Nishi, . 2001

机译：InP基长波长InAs量子点激光器的室温CW操作
5. Gallium arsenide-based long-wavelength quantum dot lasers. [D] . Park, Gyoungwon. 2001

机译：基于砷化镓的长波长量子点激光器。
6. Long-wavelength room-temperature luminescence from InAs/GaAs quantum dots with an optimized GaAsSbN capping layer [O] . Antonio D Utrilla, Jose M Ulloa, Alvaro Guzman, 2014

机译：具有优化的GaAsSbN覆盖层的InAs / GaAs量子点的长波长室温发光
7. Long-wavelength room-temperature luminescence from InAs/GaAs quantum dots with an optimized GaAsSbN capping layer [O] . Antonio D Utrilla, Jose M Ulloa, Alvaro Guzman, 2014

机译：具有优化的GaAsSbN覆盖层的InAs / GaAs量子点的长波长室温发光
8. Room-temperature continuous operation of InAsSb quantum-dot lasers near 2 mu m based on (100) InP substrate [R] . Qui, Y., Uhl, D., Keo, S. 2003

机译：基于（100）Inp衬底，Inassb量子点激光器的室温连续操作接近2μm

Room-temperature CW operation of InP-based long-wavelength InAs quantum dot lasers

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